Mapping the effects of crystal defects

March 14, 2017

Our work on quantum dislocations is highlighted at U.S. Department of Energy (DOE), Office of Science Homepage!

 along with MIT Homepage. By developing a theoretical framework of quantized dislocations, a number of materials properties affected by dislocations can be studied at a unified, microscopic level.


Comments from Prof. David Singh: “Dislocations have profound effects on properties of materials, but until now the long-range nature of the strain field has prevented direct calculations of dislocation effects. The quantization developed in this paper goes a long way to solving these problems. I expect that this new formalism will lead to greatly improved understanding of the effects of dislocations on the electrical and thermal properties of materials. This work is a major step forward.