Mapping the effects of crystal defects

March 14, 2017


By developing a theoretical framework of quantized dislocations, a number of materials properties affected by dislocations can be studied at a unified, microscopic level. This study has also been highlighted at MIT Homepage, together with U.S. Department of Energy (DOE), Office of Science Homepage:

Comments from Prof. David Singh: “Dislocations have profound effects on properties of materials, but until now the long-range nature of the strain field has prevented direct calculations of dislocation effects. The quantization developed in this paper goes a long way to solving these problems. I expect that this new formalism will lead to greatly improved understanding of the effects of dislocations on the electrical and thermal properties of materials. This work is a major step forward.